Design and Fabrication of Planar Schottky Diode for Electrostatic Discharge Protection

Abstract

A type of easy-to-fabricate Schottky diode with controllable breakdown voltage is design and fabricated. The Schottky junction is formed by the contact of Aluminum electrode and light doped n-type silicon. A special comb teeth structure is designed to lower the resistance and breakdown voltage. The diodes can achieve breakdown voltage between 2V and 16V by optimizing the doping concentration of the substrate and the distance of the comb teeth. The diode has great application potential in electro-static discharge (ESD) protection circuit, due to its easy compatibility in CMOS circuit process and ability of withstanding high currents.