Influence of Parasitic Parameters on Switching Characteristics of GaN Power Devices

Abstract

In order to better describe the switching characteristics of GaN, in this paper, the 650V enhanced GaN power devices GS66502B is taken as an example for dynamic testing, based on the double pulse test platform, the characteristics of GaN are analyzed. Secondly, the effects of parasitic parameters, such as gate drive resistance, parasitic capacitance and parasitic inductance, on the switching characteristics of GaN are discussed. The simulation is carried out on the LTspice software and verified by experiments, and the waveforms of the gate drive voltage, drain source voltage and drain current of the GaN power devices in two cases of turn-on and turn off are given in this paper. The results are compared and analyzed, and the influence of a single parasitic parameter on the switching characteristics of GS66502B is analyzed. Finally, the result is verified by experiments. Can be seen from the results of the analysis, the influence of parasitic inductance is one of the main factors, the transistor off moment can produce larger voltage spike and ringing.