An Analysis on Device-related Properties of the GaInSb Thermophotovoltaic Cell

Abstract

The device-related parameters of 0.5eV Ga0.75In0.25Sb TPV cell were analyzed by considering the effects of carrier recombination and incident radiation spectra. Regarding the investigated device, we had demonstrated that the optimum structure of the device consisted of a 0.2-0.5μm n-type baser and a 4.5-6μm p-type emitter with a doping concentration of 1-3×1017cm-3. The Auger recombination sets an ultimate limit on performance of the device; however, it needs a dislocation density of Nt<4×107cm-3, surface recombination velocity of S<2000cm/s and shunt resistance of Rsh>6Ω/cm2 to approach the Auger-limited performance. An analysis on incident radiation spectra showed that the energy conversion efficiency can be improved by increasing the temperature of the radiator and the sub-bandgap photo recirculation efficiency.